英语翻译The optimum conditions for the production of amorphous S

英语翻译
The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphereof Ar (51.99 kPa) and O2 (1.33 kPa),at 1300\21500\3 and in the presence of TiSi covering Tifoil.But before heating to its melting point,a decompose reaction for TiSi takes place at a pressureof Pθ,according to this reason we here advance a plausible partial explanation of these resultsinvolving a thermal decompose reaction of TiSiTiSiTi+Si (1)leading to the formation vapor Si.The Si then immediately reacts with O2 to form SiO2 at the experimentaltemperature:Si+O2SiO2 (2)Fig.1.Design of the chamber for the heating experiment.No.4 A NOVEL CHEMICAL ROUTE TO SiO2 NANOWIRES 391Fig.2.(a) White product growing on the Ti foil surface,(b) large quantities of the nanowires of smooth surface and uniformdiameter,(c) HRTEM image of the nanowires,(d) EDX analyses of individual nanowire.The SiO2 from eq.(2) condense solid SiO2 .As long as nuclei formed,i.e.shorter nanowires,thermalflow occurs along the nanowire axis,hence the nanowire growth continues along thisnanowire axis.So heat is dissipating along a and c axes[8] (fig.3(a)),so that this growth processremains thermodynamic balance.Finally,the very long SiO2 nanowires are formed.The amorphousSiO2 nanowires are believed to form by chemical reactions and analogous growth mechanismsinvolving a vapor-liquid-solid process.Fig.

The optimum conditions for the production of amorphous SiO2 nanowires are:an atmosphere of Ar (51.99 kPa) and O2 (1.33 kPa),at 1300 1500 and in the presence of TiSi covering Ti foil.
生产非晶SiO2纳米线的最佳条件是：环境为Ar（51.99 kPa）,O2（1.33 kPa）,1300 1500 ；且有TiSi覆盖钛箔.
But before heating to its melting point,a decompose reaction for TiSi takes place at a pressure of Pθ,according to this reason we here advance a plausible partial explanation of these results involving a thermal decompose reaction of TiSiTiSiTi+Si (1) leading to the formation vapor Si.
但在加热到其熔点之前,当压力为Pθ时发生了TiSi的分解反应,据此,我们在此对这些结果提出一个合理的局部解释,这些结果涉及导致形成气相Si的TiSiTiSiTi+Si (1)的热分解反应.
The Si then immediately reacts with O2 to form SiO2 at the experimental temperature:Si+O2SiO2 (2) Fig.1.Design of the chamber for the heating experiment.No.4 A NOVEL CHEMICAL ROUTE TO SiO2 NANOWIRES 391
之后,Si立即与O2反应,并在实验温度下形成SiO2：Si+O2SiO2 (2) .图1---加热试验的箱室设计.第4：获得/制备SiO2纳米线391的一种新化学路线.
Fig.2.(a) White product growing on the Ti foil surface,(b) large quantities of the nanowires of smooth surface and uniform diameter,(c) HRTEM image of the nanowires,(d) EDX analyses of individual nanowire.
图2（a）在钛箔表面生长的白色生成物,（b）大量表面光滑且直径均匀的纳米线,（c）纳米线的HRTEM图像,（d）单个纳米线的EDX分析.
The SiO2 from eq.(2) condense solid SiO2.
从式(2)浓缩固体SiO2得到的SiO2.
As long as nuclei formed,i.e.shorter nanowires,thermal flow occurs along the nanowire axis,hence the nanowire growth continues along this nanowire axis.
由于形成了核（即较短的纳米线）,沿纳米线轴线就出现了热流量,因而纳米线的生长得以沿该纳米线轴线继续.
So heat is dissipating along a and c axes [8] (fig.3(a)),so that this growth process remains thermodynamic balance.
因此热量沿a、c轴线消散[8]（图3（a））,以便使这一增长过程保持热力学平衡.
Finally,the very long SiO2 nanowires are formed.
最后,形成了很长的SiO2纳米线.
The amorphous SiO2 nanowires are believed to form by chemical reactions and analogous growth mechanisms involving a vapor-liquid-solid process.
通过化学反应和同功生长机制（包括气态-液态-固态过程）形式非晶SiO2纳米线得到证实.